High Isolation SiC Driver DC/DC Converter
A new high isolation DC/DC available from MicroPower Direct, the MSC215-18 is designed specifically to provide the asynchronous output voltage levels required to properly bias the gate drive of SiC semiconductors.
Offered at very low cost, the MSC215-18 operates from a 15 VDC input, providing dual outputs of +18V and -3 VDC; optimum gate bias levels for many SiC driver circuits. The output current is +100 mA. Standard features include continuous short circuit protection, 79% efficiency, and an input/output isolation level of 3,500 VAC (5,000 VDC). Isolation capacitance is very low at 3.5 pF, and the MTBF (per MIL HDBK 217F) is greater than 3.5 Mhours.
The MSC215-18 is packaged in a miniature, 7-pin SIP case that requires very little board space. The pin-out is industry standard and all case materials meet UL94-V0 requirements. It is specified for operation over the wide operating temperature range of -40°C to +105°C with no heat sinking required. Cooling is by free-air convection.
The MSC215-18 is specifically designed for use in the driver circuits for SiC MOSFET devices. It simplifies the task of setting up the correct gate bias levels while also providing a high level of isolation to the gate drive circuit.
A full technical datasheet is available on the MSC215-18 product page (see the link below). Many other SiC and IGBT power products are also available. For more information or evaluation samples, contact the factory at: 781-344-8226.