MicroPower Direct has released two new series of very high isolation DC/DC’s designed for use in high speed gate drive circuits. The MIG200LHI (for IGBT circuits) and MSC200LHI (for SiC circuits) feature an I/O isolation of 5kV and an electrical clearance/creepage distance of 14.74 mm. For most devices now on the market, the I/O isolation is 3kV and the creepage distance is about 8 mm. The wider gap allows these units to maintain a Continuous Barrier Withstand Voltage of 1,700V even when the unit is damaged.
The MIG200LHI series consists of three models with inputs of 12, 15 or 24 VDC and outputs of +15V/-9V. The MSC200LHI series has six models with inputs of 12, 15 or 24 VDC and outputs of +15V/-4V or +20V/-5V. Standard features for all models include 5,000 VAC I/O isolation (reinforced), continuous short circuit protection, up to 87% efficiency, and a low isolation capacitance of only 3.5 pF. The MTBF (per MIL HDBK 217F) is greater than 3.5 Mhours. All models are approved to EN 62368 (UL).
Both series are packaged in a compact, 10-pin SIP case. All case materials meet UL94-V0 requirements. All models are specified for operation over the wide operating temperature range of -40°C to +105°C with no heat sinking required. Cooling is by free-air convection.
The MSC200LHI and MIG200LHI are specifically designed to add an extra level of safety to the driver circuits for IGBT & SiC MOSFET devices. They simplify the task of setting up the correct gate bias levels while also providing a high level of I/O isolation and safety clearance to the gate drive circuit.
A full technical datasheet is available on the MSC200LHI and MIG200LHI product pages (see the links below). Many other SiC and IGBT power products are also available. For more information or evaluation samples, contact the factory at: 781-344-8226.